k i semiconductor applications general purpose transistors . absolute maximum ratings a =25 electrical characteristics a =25 symbol characteristics min typ max unit test conditions bv cbo collector - base breakdown voltage 75 v i c =1 0 a, i e =0 bv ceo collector - emitter breakdown voltage 40 v i c = 10 m a, i b =0 bv ebo emitter - base breakdown voltage 6 v i e =1 0 a i c =0 h fe dc current gain 10 0 4 0 0 v ce = 10 v, i c = 1 50 m a v ce(sat) collector - emitter saturation voltage 0. 3 v i c = 1 5 0m a, i b = 1 5 ma i cbo collector cut - off current 10 na v cb = 6 0v, i e =0 i ebo emitter cut - off current 10 na v eb = 3 v, i c =0 f t current gain - bandwidth product 300 mhz v ce = 20 v, i c = 2 0 m a cob output capacitance 8 pf v cb = 10 v, i e =0 f=1 mhz t stg storage temperature - 55~150 t j junction temperature 150 p c collector dissipation 625 mw v cbo collector - base voltage 75 v v ceo collector - emitter voltage 4 0 v v ebo emi tter - base voltage 6 v i c collector current 60 0m a 1 D emitter e 2 D base b 3 D collector c to - 92 n 2222a n p n s i l i c o n t r a n s i s t o r
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